| No. |
Part Name |
Description |
Manufacturer |
| 2101 |
2SC2782 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2102 |
2SC2797 |
NPN epitaxial planar RF power UHF transistor 5W 24V |
Mitsubishi Electric Corporation |
| 2103 |
2SC2798 |
NPN epitaxial planar RF power UHF transistor 12W 24V |
Mitsubishi Electric Corporation |
| 2104 |
2SC2799 |
NPN epitaxial planar RF power UHF transistor 25W 24V |
Mitsubishi Electric Corporation |
| 2105 |
2SC2800 |
NPN SPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2106 |
2SC2805 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
| 2107 |
2SC2806 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
| 2108 |
2SC280H |
Silicon NPN Epitaxial LTP Twin Transistor, intended for use in DC Amplifier |
Hitachi Semiconductor |
| 2109 |
2SC281 |
Silicon NPN Epitaxial LTP Transistor Vcbo=30V, Pc=200mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 2110 |
2SC2814 |
NPN Epitaxial Planar Silicon Transistor High-Friquency General-Purpose Amplifier Applications |
SANYO |
| 2111 |
2SC281H |
Silicon NPN Epitaxial LTP Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 2112 |
2SC2824 |
SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
TOSHIBA |
| 2113 |
2SC282H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
| 2114 |
2SC283 |
Silicon NPN Epitaxial LTP Transistor Vcbo=50V, Pc=350mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 2115 |
2SC2839 |
NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications |
SANYO |
| 2116 |
2SC283H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier |
Hitachi Semiconductor |
| 2117 |
2SC2840 |
NPN Epitaxial Planar Type Silicon Transistor |
SANYO |
| 2118 |
2SC2845 |
SILICON NPN EPITAXIAL PLANAR |
Panasonic |
| 2119 |
2SC284H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
| 2120 |
2SC2859 |
Transistor Silicon NPN Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 2121 |
2SC2860 |
Si NPN Epitaxial Planar |
Panasonic |
| 2122 |
2SC2868 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 2123 |
2SC2873 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 2124 |
2SC2876 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
| 2125 |
2SC2877 |
Silicon NPN epitaxial planar audio frequency power transistor |
TOSHIBA |
| 2126 |
2SC2878 |
Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications |
TOSHIBA |
| 2127 |
2SC2879 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 2128 |
2SC2881 |
Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications |
TOSHIBA |
| 2129 |
2SC2882 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
| 2130 |
2SC2883 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
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