| No. |
Part Name |
Description |
Manufacturer |
| 2191 |
2SC3123 |
Transistor Silicon NPN Epitaxial Planar Type TV VHF Mixer Applications |
TOSHIBA |
| 2192 |
2SC3124 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, VHF Oscillator Applications |
TOSHIBA |
| 2193 |
2SC3125 |
Transistor Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier Applications |
TOSHIBA |
| 2194 |
2SC313 |
Silicon NPN Epitaxial Planar Transistor, intended for use in UHF Tuner Local Oscillator |
Hitachi Semiconductor |
| 2195 |
2SC3133 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2196 |
2SC3134 |
NPN Epitaxial Planar Silicon Transistors High Vebo, AF Amp Applications |
SANYO |
| 2197 |
2SC3135 |
NPN Epitaxial Planar Silicon Transistors High-hFE, AF Amp Applications |
SANYO |
| 2198 |
2SC3136 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
| 2199 |
2SC3137 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
| 2200 |
2SC313H |
Silicon NPN Epitaxial Planar Transistor, intended for use in UHF Tuner Local Oscillator |
Hitachi Semiconductor |
| 2201 |
2SC3142 |
NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2202 |
2SC3143 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications |
SANYO |
| 2203 |
2SC3144 |
NPN Epitaxial Planar Silicon Darlington Transistors 60V/3A for High-Speed Drivers Applications |
SANYO |
| 2204 |
2SC3145 |
NPN Epitaxial Planar Silicon Darlington Transistors 60V/5A for High-Speed Drivers Applications |
SANYO |
| 2205 |
2SC3147 |
NPN EPITAXIAL (VHF BAND POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 2206 |
2SC3172 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
| 2207 |
2SC3173 |
NPN Epitaxial Planar Type Silicon Transistor |
SANYO |
| 2208 |
2SC3173 |
NPN Epitaxial Planar Type Silicon Transistor |
SANYO |
| 2209 |
2SC3175 |
NPN Epitaxial Planar Type Silicon Transistor |
SANYO |
| 2210 |
2SC3198L |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 2211 |
2SC3199 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Unknow |
| 2212 |
2SC3199L |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Unknow |
| 2213 |
2SC3200 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 2214 |
2SC3201 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 2215 |
2SC3202 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 2216 |
2SC3202 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 2217 |
2SC3203 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 2218 |
2SC3206 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 2219 |
2SC3218-M |
NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE |
NEC |
| 2220 |
2SC321H |
Silicon NPN Epitaxial Planar Transistor, intended for use in High Speed Switching |
Hitachi Semiconductor |
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