| No. |
Part Name |
Description |
Manufacturer |
| 2161 |
2SC3039 |
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION) |
Wing Shing Computer Components |
| 2162 |
2SC3052 |
LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2163 |
2SC3064 |
NPN Epitaxial Planar Silicon CompositeTransistor |
SANYO |
| 2164 |
2SC3065 |
NPN Epitaxial Planar Silicon CompositeTransistor |
SANYO |
| 2165 |
2SC3067 |
NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONS |
SANYO |
| 2166 |
2SC3068 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2167 |
2SC3069 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2168 |
2SC3070 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2169 |
2SC3071 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2170 |
2SC3072 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 2171 |
2SC3073 |
SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
TOSHIBA |
| 2172 |
2SC3074 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications |
TOSHIBA |
| 2173 |
2SC3076 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 2174 |
2SC3098 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 2175 |
2SC3099 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 2176 |
2SC3101 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2177 |
2SC3102 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2178 |
2SC3103 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2179 |
2SC3104 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2180 |
2SC3105 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2181 |
2SC3110 |
Si NPN epitaxial planar. RF wide band low-noise amplifier. |
Panasonic |
| 2182 |
2SC3110 |
Si NPN Epitaxial Planar |
Unknow |
| 2183 |
2SC3112 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications |
TOSHIBA |
| 2184 |
2SC3113 |
Transistor Silicon NPN Epitaxial Type For Audio Amplifier and Switching Applications |
TOSHIBA |
| 2185 |
2SC3114 |
NPN Epitaxial Planar Silicon Transistors High-Vebo, AF Amp Applications |
SANYO |
| 2186 |
2SC3116 |
NPN Epitaxial Planar Silicon Transistors 160V/700mA Switching Applications |
SANYO |
| 2187 |
2SC3117 |
NPN Epitaxial Planar Silicon Transistors 160V/1.5A Switching Applications |
SANYO |
| 2188 |
2SC3119 |
Silicon NPN epitaxial transistor |
TOSHIBA |
| 2189 |
2SC3121 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base) |
TOSHIBA |
| 2190 |
2SC3122 |
Transistor Silicon NPN Epitaxial Planar Type TV VHF RF Amplifier Applications |
TOSHIBA |
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