| No. |
Part Name |
Description |
Manufacturer |
| 211 |
CR3PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 212 |
CR3PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 213 |
CR5AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 214 |
CR5AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 215 |
CR6CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 216 |
CR6CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 217 |
CR6PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 218 |
CR6PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 219 |
CR8AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 220 |
CR8AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 221 |
CR8PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 222 |
CR8PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 223 |
CSC1573 |
1.000W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.070A Ic, 30 - 220 hFE. |
Continental Device India Limited |
| 224 |
CSC1573P |
1.000W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.070A Ic, 30 - 100 hFE. |
Continental Device India Limited |
| 225 |
CSC1573Q |
1.000W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.070A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 226 |
CSC1573R |
1.000W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.070A Ic, 100 - 220 hFE. |
Continental Device India Limited |
| 227 |
CT30SM-1 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 228 |
CT60AM-18B |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 229 |
CT60AM-18F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 230 |
CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 231 |
CY20AAJ-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 232 |
CY20AAJ-8F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 233 |
CY25AAJ-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 234 |
CY25AAJ-8F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 235 |
DTZ250 |
V(br): 250V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor |
SGS Thomson Microelectronics |
| 236 |
DTZ250A |
V(br): 250V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor |
SGS Thomson Microelectronics |
| 237 |
EN9051 |
N-Channel Power MOSFET, 250V, 3A, 2.4Ohm, Single TP/TP-FA |
ON Semiconductor |
| 238 |
FDA2712 |
N-Channel UltraFET Trench MOSFET 250V, 64A, 34mOhms |
Fairchild Semiconductor |
| 239 |
FDA33N25 |
N-Channel UniFETTM MOSFET 250V, 33A, 94m? |
Fairchild Semiconductor |
| 240 |
FDA59N25 |
N-Channel UniFETTM MOSFET 250V, 59A, 49m? |
Fairchild Semiconductor |
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