| No. |
Part Name |
Description |
Manufacturer |
| 181 |
C1658 |
Approved for use with Conexant ADSL Chip Set Meets requirements of IEC950 for supplementary insulation, 250V working voltage |
CoEv Inc |
| 182 |
C1676 |
Approved for use with GlobeSpan HDSL2 Chip Set Meets the requirements of IEC60950 for supplementary insulation, 250V working voltage |
CoEv Inc |
| 183 |
C1733 |
ADSL Line Coupling Transformer, IEC60950 Supplementary 250V |
CoEv Inc |
| 184 |
C2042 |
Analog Devices AD20MSP930 CPE Line Transformer Meet requirements of IEC60950 for supplementary insulation, 250V working voltage |
CoEv Inc |
| 185 |
C2852 |
ADSL Coupling Transformer, IEC950 Supplementary 250V 850UH, 1:1 (Line : IC), GW CEP 7 |
Tyco Electronics |
| 186 |
CIL9263 |
1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.100A Ic, 75 - hFE |
Continental Device India Limited |
| 187 |
CJF15032 |
50.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 2.000A Ic, 50 hFE. |
Continental Device India Limited |
| 188 |
CJF15033 |
50.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 2.000A Ic, 50 hFE. |
Continental Device India Limited |
| 189 |
CM200TU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 190 |
CM350DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 191 |
CM3P-250L |
Gastube arrester, 250V |
SEMITEC |
| 192 |
CM400DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 193 |
CM450HA-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 194 |
CM600DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 195 |
CM600HA-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 196 |
CM600HN-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 197 |
CR02AM-4 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 198 |
CR02AM-6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 199 |
CR02AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 200 |
CR03AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 201 |
CR03AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 202 |
CR04AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 203 |
CR04AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 204 |
CR05AS-4 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 205 |
CR05AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 206 |
CR08AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 207 |
CR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 208 |
CR12AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 209 |
CR12AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 210 |
CR3JM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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