| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2SA1007 |
Trans GP BJT PNP 250V 1.5A |
New Jersey Semiconductor |
| 62 |
2SC4448 |
Trans GP BJT NPN 250V 0.15A 3-Pin(3+Tab) TO-220NIS |
New Jersey Semiconductor |
| 63 |
2SC5210 |
500mW SMD NPN transistor, maximum rating: 250V Vceo, 100mA Ic, 55 to 230 hFE. |
Isahaya Electronics Corporation |
| 64 |
2SD1410 |
6A; 25W; V(ceo): 250V; NPN darlington transistor |
TOSHIBA |
| 65 |
2SK3544 |
Power MOSFET (N-ch 250V<VDSS≤500V) |
TOSHIBA |
| 66 |
2SK3568 |
Power MOSFET (N-ch 250V<VDSS≤500V) |
TOSHIBA |
| 67 |
2SK3757 |
Power MOSFET (N-ch 250V<VDSS≤500V) |
TOSHIBA |
| 68 |
2SK3869 |
Power MOSFET (N-ch 250V<VDSS≤500V) |
TOSHIBA |
| 69 |
2SK3907 |
Power MOSFET (N-ch 250V<VDSS≤500V) |
TOSHIBA |
| 70 |
2SK3935 |
Power MOSFET (N-ch 250V<VDSS≤500V) |
TOSHIBA |
| 71 |
2SK4012 |
Power MOSFET (N-ch 250V<VDSS≤500V) |
TOSHIBA |
| 72 |
2SK4107 |
Power MOSFET (N-ch 250V<VDSS≤500V) |
TOSHIBA |
| 73 |
30KP250A |
Diode TVS Single Uni-Dir 250V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 74 |
30KP250CA |
Diode TVS Single Bi-Dir 250V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 75 |
30KPA250A |
Diode TVS Single Uni-Dir 250V 30KW |
New Jersey Semiconductor |
| 76 |
30KPA250C |
Diode TVS Single Uni-Dir 250V 30KW |
New Jersey Semiconductor |
| 77 |
30KPA250CA |
Diode TVS Single Bi-Dir 250V 30KW |
New Jersey Semiconductor |
| 78 |
374120000 |
UL 248-14 / 250V / T |
WICKMANN USA |
| 79 |
374120041 |
UL 248-14 / 250V / T |
WICKMANN USA |
| 80 |
5KP25A |
Diode TVS Single Uni-Dir 250V 5KW 2-Pin Case P600 Bulk |
New Jersey Semiconductor |
| 81 |
AQV103AX |
PhotoMOS relay, HF (high function) type [1-channel (form A0 type]. Load voltage 250V, load current 300 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 82 |
AQV103AZ |
PhotoMOS relay, HF (high function) type [1-channel (form A0 type]. Load voltage 250V, load current 300 mA. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 83 |
AQV203AX |
PhotoMOS relay, HF (high function) type [1-channel (form A0 type]. Load voltage 250V, load current 200 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 84 |
AQV203AZ |
PhotoMOS relay, HF (high function) type [1-channel (form A0 type]. Load voltage 250V, load current 200 mA. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 85 |
ARF1501 |
RF POWER MOSFET 250V 1500W 40MHz |
Advanced Power Technology |
| 86 |
ARF446 |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 250V 250W 65MHz |
Advanced Power Technology |
| 87 |
ARF447 |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 250V 250W 65MHz |
Advanced Power Technology |
| 88 |
ARF461A |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 250V 150W 65MHz |
Advanced Power Technology |
| 89 |
ARF461B |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 250V 150W 65MHz |
Advanced Power Technology |
| 90 |
AUIRF7799L2 |
A 250V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 125 amperes optimized with low on resistance |
International Rectifier |
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