No. |
Part Name |
Description |
Manufacturer |
31 |
2N3440 |
Trans GP BJT NPN 250V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
32 |
2N3440L |
Trans GP BJT NPN 250V 1A 3-Pin TO-5 |
New Jersey Semiconductor |
33 |
2N3584 |
Trans GP BJT NPN 250V 5A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
34 |
2N4296 |
Trans GP BJT NPN 250V 1A |
New Jersey Semiconductor |
35 |
2N4931 |
Trans GP BJT PNP 250V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
36 |
2N5076 |
Trans GP BJT NPN 250V 3A 3-Pin TO-59 |
New Jersey Semiconductor |
37 |
2N5077 |
Trans GP BJT NPN 250V 3A 3-Pin TO-59 |
New Jersey Semiconductor |
38 |
2N5344 |
Trans GP BJT NPN 250V 1A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
39 |
2N5655 |
Trans GP BJT NPN 250V 1A 3-Pin TO-126 Box |
New Jersey Semiconductor |
40 |
2N6078 |
Trans GP BJT NPN 250V 7A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
41 |
2N6078AT |
Trans GP BJT NPN 250V 7A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
42 |
2N6396 |
12A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
43 |
2N6402 |
16A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
44 |
2N6421 |
Trans GP BJT PNP 250V 2A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
45 |
2N6463 |
Trans GP BJT NPN 250V 0.1A |
New Jersey Semiconductor |
46 |
2N6464 |
Trans GP BJT NPN 250V 0.1A |
New Jersey Semiconductor |
47 |
2N6497 |
Trans GP BJT NPN 250V 5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
48 |
2N6497 |
Power 5A 250V Discrete NPN |
ON Semiconductor |
49 |
2N6511 |
Trans GP BJT NPN 250V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
50 |
2N6515 |
0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE |
Continental Device India Limited |
51 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
52 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
53 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
54 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
55 |
2N6557 |
Trans GP BJT NPN 250V 0.5A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
56 |
2N686 |
Thyristor SCR 250V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
57 |
2N686A |
Thyristor SCR 250V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
58 |
2SA1001 |
Trans GP BJT PNP 250V 1.5A |
New Jersey Semiconductor |
59 |
2SA1002 |
Trans GP BJT PNP 250V 1.5A |
New Jersey Semiconductor |
60 |
2SA1003 |
Trans GP BJT PNP 250V 1.5A |
New Jersey Semiconductor |
| | | |