| No. |
Part Name |
Description |
Manufacturer |
| 151 |
BF258 |
1.000W General Purpose NPN Metal Can Transistor. 250V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 152 |
BF258 |
Trans GP BJT NPN 250V 0.1A 3-Pin TO-39 |
New Jersey Semiconductor |
| 153 |
BF392 |
1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 1.000A Ic, 25 - 0 hFE |
Continental Device India Limited |
| 154 |
BF415 |
Trans GP BJT NPN 250V 0.1A 3-Pin TO-126 |
New Jersey Semiconductor |
| 155 |
BF416 |
Trans GP BJT NPN 250V 0.1A 3-Pin TO-126 |
New Jersey Semiconductor |
| 156 |
BF422 |
0.900W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 157 |
BF422 |
Trans GP BJT NPN 250V 0.1A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 158 |
BF422BPL |
0.900W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 159 |
BF423 |
0.800W High Voltage PNP Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 160 |
BF458 |
10.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 161 |
BF458 |
Trans GP BJT NPN 250V 0.3A 3-Pin TO-126 |
New Jersey Semiconductor |
| 162 |
BF469 |
2.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF470 |
Continental Device India Limited |
| 163 |
BF469 |
Trans GP BJT NPN 250V 0.05A 3-Pin TO-126 |
New Jersey Semiconductor |
| 164 |
BF470 |
2.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF469 |
Continental Device India Limited |
| 165 |
BF470 |
Trans GP BJT PNP 250V 0.05A 3-Pin TO-126 |
New Jersey Semiconductor |
| 166 |
BF822 |
0.250W High Voltage NPN SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF823 |
Continental Device India Limited |
| 167 |
BF823 |
0.250W High Voltage PNP SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF822 |
Continental Device India Limited |
| 168 |
BFT28C |
Trans GP BJT PNP 250V 1A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 169 |
BSS139 |
Low Voltage MOSFETs - Depletion MOSFET, 250V, SOT-23, RDSon = 30Ohm, 30mA, LL |
Infineon |
| 170 |
BSS72 |
Trans GP BJT NPN 250V 0.5A 3-Pin TO-18 |
New Jersey Semiconductor |
| 171 |
BUR52 |
Trans GP BJT NPN 250V 60A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 172 |
BUV12 |
20A NPN silicon power metal transistor 250V 150W SWITCHMODE series |
Motorola |
| 173 |
BUV22 |
Power 40A 250V NPN TO204 |
ON Semiconductor |
| 174 |
BUV42 |
Trans GP BJT NPN 250V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 175 |
BUX22 |
Trans GP BJT NPN 250V 40A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 176 |
BUY56 |
Trans GP BJT NPN 250V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 177 |
BUY70C |
Trans GP BJT NPN 250V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 178 |
BUZ903 |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. |
Magnatec |
| 179 |
BUZ903D |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. |
Magnatec |
| 180 |
BUZ903DP |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. |
Magnatec |
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