| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2SC5185 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 212 |
2SC5185-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 213 |
2SC5185-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 214 |
2SC5186 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 215 |
2SC5186-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 216 |
2SC5288 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 217 |
2SC5288-T1 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 218 |
2SC5289 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 219 |
2SC5376FV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 220 |
2SC5382 |
High-Voltage High-Speed Switching Transistors / Switching Transistors for Lighting |
Shindengen |
| 221 |
2SC5507 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 222 |
2SC5507-T2 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 223 |
2SC5508 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 224 |
2SC5508-T2 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 225 |
2SC5606 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
| 226 |
2SC5606-T1 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
| 227 |
2SC6026CT |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 228 |
2SC6026MFV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 229 |
2SC6100 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 230 |
2SC6133 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 231 |
2SC6134 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 232 |
2SC6135 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 233 |
2SD1011 |
Silicon NPN epitaxial planer type For low-frequency amplification |
Panasonic |
| 234 |
2SD1046 |
NPN Epitaxial Planar Silicon Transistors For LF Power Amplifier, 50W Output Large Power Switching Applications |
SANYO |
| 235 |
2SD1092 |
NPN DOUBLE DIFFUSED TYPE (POWER REGULATOR FOR LINE OPERATED TV) |
TOSHIBA |
| 236 |
2SD1208 |
Silicon NPN triple diffused transistor, power regulator for line operated TV |
TOSHIBA |
| 237 |
2SD1294 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER REGULATOR FOR LINE OPERATED TV |
TOSHIBA |
| 238 |
2SD1994 |
Transistor - Silicon NPN Epitaxial Planar Type - For low-frequency power amplification and drive, Complementary pair with 2SB1322 and 2SB1322A |
Panasonic |
| 239 |
2SD2181 |
Transistor - Silicon NPN Epitaxial Planar Type - For low-frequency output amplification - Complementary pair with 2SB1437 |
Panasonic |
| 240 |
2SD2217 |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
NEC |
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