No. |
Part Name |
Description |
Manufacturer |
91 |
2N4265 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
92 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
93 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
94 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
95 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
96 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
97 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
98 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
99 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
100 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
101 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
102 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
103 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
104 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
105 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
106 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
107 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
108 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
109 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
110 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
111 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
112 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
113 |
2N6038 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
114 |
2N6039 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
115 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
116 |
2N6051 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
117 |
2N6052 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
118 |
2N6053 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
119 |
2N6054 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
120 |
2N6055 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
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