No. |
Part Name |
Description |
Manufacturer |
61 |
2N3137 |
NPN silicon transistor for large signal VHF and UHF applications |
Motorola |
62 |
2N3227 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
63 |
2N3295 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
64 |
2N3296 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
65 |
2N3297 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
66 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
67 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
68 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
69 |
2N3713 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
70 |
2N3714 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
71 |
2N3715 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
72 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
73 |
2N3789 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
74 |
2N3790 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
75 |
2N3791 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
76 |
2N3792 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
77 |
2N3796 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
78 |
2N3797 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
79 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
80 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
81 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
82 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
83 |
2N3961 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
84 |
2N4072 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
85 |
2N4073 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
86 |
2N4248 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
87 |
2N4249 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
88 |
2N4250 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
89 |
2N4250A |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
90 |
2N4264 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
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