No. |
Part Name |
Description |
Manufacturer |
121 |
2N6056 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
122 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
123 |
2N6058 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
124 |
2N6059 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
125 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
126 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
127 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
128 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
129 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
130 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
131 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
132 |
2N6620 |
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
Siemens |
133 |
2N929 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
134 |
2N929 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
135 |
2N929A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
136 |
2N930 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
137 |
2N930 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
138 |
2N930A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
139 |
2SA1221 |
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
140 |
2SA1222 |
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
141 |
2SA1316 |
Transistor Silicon PNP Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers |
TOSHIBA |
142 |
2SA2154CT |
Transistor for low frequency small-signal amplification |
TOSHIBA |
143 |
2SA2154MFV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
144 |
2SA2195 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
145 |
2SA2214 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
146 |
2SA2215 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
147 |
2SA493-GR |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
148 |
2SA493-Y |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
149 |
2SA493G |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
150 |
2SA494 |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
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