| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N5911 |
Panel Mount Light Emitting Diode visible green PN gallium phosphide |
Motorola |
| 212 |
2N5911 |
Matched High Gain |
Vishay |
| 213 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 214 |
2N5912 |
Panel mount light emitting diode visible yellow PN gallium phosphide |
Motorola |
| 215 |
2N5912 |
Matched High Gain |
Vishay |
| 216 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 217 |
2N6071 |
Sensitive Gate Triacs |
ON Semiconductor |
| 218 |
2N6071-D |
Sensitive Gate Triacs Silicon Bidirectional Thyristors |
ON Semiconductor |
| 219 |
2N6071A |
Sensitive Gate Triacs |
ON Semiconductor |
| 220 |
2N6071B |
Sensitive Gate Triacs |
ON Semiconductor |
| 221 |
2N6071BT |
Sensitive Gate Triacs |
ON Semiconductor |
| 222 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 223 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 224 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 225 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
| 226 |
2N6073A |
Sensitive Gate Triacs |
ON Semiconductor |
| 227 |
2N6073A |
Sensitive Gate Triacs |
ON Semiconductor |
| 228 |
2N6073B |
Sensitive Gate Triacs |
ON Semiconductor |
| 229 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 230 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 231 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 232 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
| 233 |
2N6075A |
Sensitive Gate Triacs |
ON Semiconductor |
| 234 |
2N6075B |
Sensitive Gate Triacs |
ON Semiconductor |
| 235 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 236 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 237 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 238 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
| 239 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 240 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
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