| No. |
Part Name |
Description |
Manufacturer |
| 331 |
350PJT160 |
V(rrm/drm): 1600V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 332 |
3606 |
Digitally Controlled Programmable gain instrumentation amplifier |
Burr Brown |
| 333 |
3606 |
Digitally-Controlled Programmable Gain Instrumentation Amplifier |
Texas Instruments |
| 334 |
3606A |
Digitally Controlled Programmable gain instrumentation amplifier |
Burr Brown |
| 335 |
3606B |
Digitally Controlled Programmable gain instrumentation amplifier |
Burr Brown |
| 336 |
3606BG |
Digitally-Controlled Programmable Gain Instrumentation Amplifier |
Texas Instruments |
| 337 |
3B16 |
Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
| 338 |
3B16-00 |
Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
| 339 |
3B16-01 |
Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
| 340 |
3B16-CUSTOM |
Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
| 341 |
3B18 |
Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Module |
Analog Devices |
| 342 |
3B18-00 |
Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Module |
Analog Devices |
| 343 |
3B18-01 |
Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Module |
Analog Devices |
| 344 |
3B18-02 |
Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Module |
Analog Devices |
| 345 |
3B18-CUSTOM |
Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Module |
Analog Devices |
| 346 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
| 347 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| 348 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 349 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 350 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
| 351 |
3N201 |
DUAL GATE MOSFET VHF AMPLIFIER |
Motorola |
| 352 |
3N202 |
DUAL GATE MOSFET VHF AMPLIFIER |
Motorola |
| 353 |
3N203 |
DUAL GATE MOSFET VHF AMPLIFIER |
Motorola |
| 354 |
3N211 |
Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion) |
Motorola |
| 355 |
3N212 |
Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion) |
Motorola |
| 356 |
3N213 |
Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion) |
Motorola |
| 357 |
3SK101 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
| 358 |
3SK102 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
| 359 |
3SK114 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
| 360 |
3SK115 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
| | | |
