No. |
Part Name |
Description |
Manufacturer |
241 |
2N6530 |
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
242 |
2N6531 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. |
General Electric Solid State |
243 |
2N6532 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
244 |
2N6533 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. |
General Electric Solid State |
245 |
2N6576 |
15 A N-P-N darlington power transistor. 60 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
246 |
2N6577 |
15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
247 |
2N6578 |
15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
248 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
249 |
2N6649 |
10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
250 |
2N6650 |
10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
251 |
2N6666 |
10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
252 |
2N6667 |
10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
253 |
2N6668 |
10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
254 |
2N7014 |
MOSPOWER N-Channel Enhancement Mode Transistor low gate threshold 100V 3.5A |
Siliconix |
255 |
2PG301 |
Insulated Gate Bipolar Transistor |
Panasonic |
256 |
2PG302 |
For Insulated Gate Bipolar Transistor |
Panasonic |
257 |
2PG303 |
Insulated Gate Bipolar Transistor |
Panasonic |
258 |
2PG304 |
Insulated Gate Bipolar Transistor |
Panasonic |
259 |
2PG351 |
Insulated Gate Bipolar Transistor |
Panasonic |
260 |
2PG352 |
Insulated Gate Bipolar Transistor |
Panasonic |
261 |
2PG353 |
Insulated Gate Bipolar Transistor |
Panasonic |
262 |
2PG401 |
Insulated Gate Bipolar Transistor |
Panasonic |
263 |
2PG402 |
Insulated Gate Bipolar Transistor |
Panasonic |
264 |
2SA1612 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR |
NEC |
265 |
2SA811 |
Audio frequency high gain amplifier PNP silicon epitaxial transistor |
NEC |
266 |
2SA811A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
267 |
2SB1316TL |
PNP High gain amplifier Transistor(Darlington) |
ROHM |
268 |
2SB1639 |
High-current gain Power Transistor (-60V/ -3A) |
ROHM |
269 |
2SB852KT146B |
PNP High gain amplifier Transistor(Darlington) |
ROHM |
270 |
2SC1545 |
High Gain Amp. & Switching Epitaxial Planar NPN Silicon Darlington Transistors |
ROHM |
| | | |