| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N6577 |
15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
| 242 |
2N6578 |
15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
| 243 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 244 |
2N6649 |
10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 245 |
2N6650 |
10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 246 |
2N6666 |
10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
| 247 |
2N6667 |
10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 248 |
2N6668 |
10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 249 |
2N7014 |
MOSPOWER N-Channel Enhancement Mode Transistor low gate threshold 100V 3.5A |
Siliconix |
| 250 |
2PG301 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 251 |
2PG302 |
For Insulated Gate Bipolar Transistor |
Panasonic |
| 252 |
2PG303 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 253 |
2PG304 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 254 |
2PG351 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 255 |
2PG352 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 256 |
2PG353 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 257 |
2PG401 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 258 |
2PG402 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 259 |
2SA1612 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR |
NEC |
| 260 |
2SA811 |
Audio frequency high gain amplifier PNP silicon epitaxial transistor |
NEC |
| 261 |
2SA811A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 262 |
2SB1316TL |
PNP High gain amplifier Transistor(Darlington) |
ROHM |
| 263 |
2SB1639 |
High-current gain Power Transistor (-60V/ -3A) |
ROHM |
| 264 |
2SB852KT146B |
PNP High gain amplifier Transistor(Darlington) |
ROHM |
| 265 |
2SC1545 |
High Gain Amp. & Switching Epitaxial Planar NPN Silicon Darlington Transistors |
ROHM |
| 266 |
2SC1622 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 267 |
2SC1622A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 268 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
| 269 |
2SC2298 |
HIGH GAIN AMPLIFIER |
Hitachi Semiconductor |
| 270 |
2SC2352 |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
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