| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N1488 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
| 212 |
2N1489 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
| 213 |
2N1490 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
| 214 |
2N1613 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 215 |
2N1613 |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 216 |
2N1613A |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 217 |
2N1711 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 218 |
2N1711 |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 219 |
2N1711A |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 220 |
2N1893 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 221 |
2N1991 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 222 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 223 |
2N2194 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
| 224 |
2N2217 |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 225 |
2N2218 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 226 |
2N2218 |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 227 |
2N2218 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
| 228 |
2N2218A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 229 |
2N2218A |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 230 |
2N2219 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 231 |
2N2219 |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 232 |
2N2219 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 233 |
2N2219A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 234 |
2N2219A |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 235 |
2N2220 |
Silicon low power general purpose NPN transistor - metal case |
IPRS Baneasa |
| 236 |
2N2221 |
0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 237 |
2N2221 |
Silicon low power general purpose NPN transistor - metal case |
IPRS Baneasa |
| 238 |
2N2221A |
0.500W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 25 hFE. |
Continental Device India Limited |
| 239 |
2N2221A |
Silicon low power general purpose NPN transistor - metal case |
IPRS Baneasa |
| 240 |
2N2222 |
0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 30 hFE. |
Continental Device India Limited |
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