| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2N3447 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 272 |
2N3478 |
0.200W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 25 - 150 hFE. |
Continental Device India Limited |
| 273 |
2N3496 |
0.400W General Purpose PNP Metal Can Transistor. 80V Vceo, 0.100A Ic, 35 hFE. |
Continental Device India Limited |
| 274 |
2N3497 |
0.400W General Purpose PNP Metal Can Transistor. 120V Vceo, 0.100A Ic, 35 hFE. |
Continental Device India Limited |
| 275 |
2N3498 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 276 |
2N3499 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 35 hFE. |
Continental Device India Limited |
| 277 |
2N3500 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 20 hFE. |
Continental Device India Limited |
| 278 |
2N3501 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. |
Continental Device India Limited |
| 279 |
2N3501 |
TO-39 Metal Can Transistor |
Micro Commercial Components |
| 280 |
2N3535 |
Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
| 281 |
2N3558 |
Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 282 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 283 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 284 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 285 |
2N3665 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 286 |
2N3700 |
0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 287 |
2N3716 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 288 |
2N3724 |
1.000W Switching NPN Metal Can Transistor. 30V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 289 |
2N3725 |
1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 290 |
2N3734 |
Bipolar NPN Device in aHermetically sealed TO39 Metal Package |
SemeLAB |
| 291 |
2N3767 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 292 |
2N3772 |
150.000W Power NPN Metal Can Transistor. 60V Vceo, 20.000A Ic, 15 - 60 hFE. |
Continental Device India Limited |
| 293 |
2N3773 |
150.000W Power NPN Metal Can Transistor. 140V Vceo, 16.000A Ic, 5 hFE. |
Continental Device India Limited |
| 294 |
2N3867 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
| 295 |
2N3918 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 296 |
2N3931 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 297 |
2N4000 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 298 |
2N4001 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
| 299 |
2N4027 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 300 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
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