| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N2222 |
Silicon low power general purpose NPN transistor - metal case |
IPRS Baneasa |
| 242 |
2N2222 |
TO-18 Metal Can Transistors |
Micro Commercial Components |
| 243 |
2N2222A |
0.500W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 40 hFE. |
Continental Device India Limited |
| 244 |
2N2222A |
Silicon low power general purpose NPN transistor - metal case |
IPRS Baneasa |
| 245 |
2N2222A |
TO-18 Metal Can Transistors |
Micro Commercial Components |
| 246 |
2N2243A |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 247 |
2N2270 |
1.000W General Purpose NPN Metal Can Transistor. 45V Vceo, 1.000A Ic, 50 - 200 hFE. |
Continental Device India Limited |
| 248 |
2N2368 |
Silicon low-current fast switching NPN transistor - metal case |
IPRS Baneasa |
| 249 |
2N2368S |
Silicon low-current fast switching NPN transistor - metal case |
IPRS Baneasa |
| 250 |
2N2369 |
1.200W General Purpose NPN Metal Can Transistor. 15V Vceo, A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 251 |
2N2369 |
Silicon low-current fast switching NPN transistor - metal case |
IPRS Baneasa |
| 252 |
2N2369A |
1.200W General Purpose NPN Metal Can Transistor. 15V Vceo, A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 253 |
2N2369A |
Silicon low-current fast switching NPN transistor - metal case |
IPRS Baneasa |
| 254 |
2N23867 |
1.000W Power PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
| 255 |
2N2432 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 256 |
2N2484 |
0.360W General Purpose NPN Metal Can Transistor. 60V Vceo, 0.050A Ic, 250 hFE. |
Continental Device India Limited |
| 257 |
2N2845 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 258 |
2N2890 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 259 |
2N2891 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 260 |
2N2891 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 261 |
2N2894A |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 262 |
2N2895 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 263 |
2N2896 |
1.800W General Purpose NPN Metal Can Transistor. 90V Vceo, 1.000A Ic, 35 hFE. |
Continental Device India Limited |
| 264 |
2N2904 |
0.600W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
| 265 |
2N2904 |
Low power, general purpose PNP transistor, metal case |
IPRS Baneasa |
| 266 |
2N2904A |
0.600W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 40 hFE. |
Continental Device India Limited |
| 267 |
2N2904A |
Low power, general purpose PNP transistor, metal case |
IPRS Baneasa |
| 268 |
2N2904A |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 269 |
2N2905 |
0.600W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 30 hFE. |
Continental Device India Limited |
| 270 |
2N2905 |
Low power, general purpose PNP transistor, metal case |
IPRS Baneasa |
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