No. |
Part Name |
Description |
Manufacturer |
211 |
1N6275 |
15 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
212 |
1N6275A |
15 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
213 |
1N6275C |
15 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
214 |
1N6275CA |
15 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
215 |
1N628 |
125 V, 500 mW general purpose diode |
BKC International Electronics |
216 |
1N629 |
175 V, 500 mW general purpose diode |
BKC International Electronics |
217 |
1N6292 |
75 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
218 |
1N6292A |
75 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
219 |
1N6292C |
75 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
220 |
1N6292CA |
75 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
221 |
1N634 |
115 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
222 |
1N635 |
165 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
223 |
1N6492 |
Hermetic shottky rectifier (4 Amp, 45 Volts) |
Unitrode |
224 |
1N6640U |
Aerospace 0.3 A 75 V switching diode |
ST Microelectronics |
225 |
1N6640U01D |
Aerospace 0.3 A 75 V switching diode |
ST Microelectronics |
226 |
1N6640U02D |
Aerospace 0.3 A 75 V switching diode |
ST Microelectronics |
227 |
1N6640UD1 |
Aerospace 0.3 A 75 V switching diode |
ST Microelectronics |
228 |
1N695A |
25 V, 500 mA, gold bonded diode |
BKC International Electronics |
229 |
1N755 |
7.5 V, 400 mW silicon linear diode |
BKC International Electronics |
230 |
1N755 |
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). |
Fairchild Semiconductor |
231 |
1N755 |
400mW, 7.5 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
232 |
1N755A |
7.5 V, 400 mW silicon linear diode |
BKC International Electronics |
233 |
1N755A |
500mW, silicon zener diode. Zener voltage 7.5 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
234 |
1N755A-1 |
7.5 V, 400 mW silicon zener diode |
BKC International Electronics |
235 |
1N755B |
7.5 V, 20 mA, zener diode |
Leshan Radio Company |
236 |
1N755C |
500mW, silicon zener diode. Zener voltage 7.5 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
237 |
1N755C |
7.5 V, 20 mA, zener diode |
Leshan Radio Company |
238 |
1N755D |
500mW, silicon zener diode. Zener voltage 7.5 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
239 |
1N755D |
7.5 V, 20 mA, zener diode |
Leshan Radio Company |
240 |
1N773 |
65 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
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