| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1N5374B |
75 V, 20 mA, 5 W glass passivated zener diode |
Fagor |
| 182 |
1N5374B |
75 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 183 |
1N5391G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V. |
Jinan Gude Electronic Device |
| 184 |
1N541 |
45 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 185 |
1N542 |
45 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 186 |
1N5527A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 187 |
1N5527B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 188 |
1N5819U |
Aerospace 45 V power Schottky rectifier |
ST Microelectronics |
| 189 |
1N5819U01B |
Aerospace 45 V power Schottky rectifier |
ST Microelectronics |
| 190 |
1N5819U02B |
Aerospace 45 V power Schottky rectifier |
ST Microelectronics |
| 191 |
1N5819UB1 |
Aerospace 45 V power Schottky rectifier |
ST Microelectronics |
| 192 |
1N5829 |
25 Amp Schottky Barrier Rectifier 20 to 35 Volts |
Micro Commercial Components |
| 193 |
1N5830 |
25 Amp Schottky Barrier Rectifier 20 to 35 Volts |
Micro Commercial Components |
| 194 |
1N5831 |
25 Amp Schottky Barrier Rectifier 20 to 35 Volts |
Micro Commercial Components |
| 195 |
1N5929B |
15 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 196 |
1N5946 |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 197 |
1N5946A |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 198 |
1N5946B |
75 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 199 |
1N5946C |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 200 |
1N5946D |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 201 |
1N5V1 |
Inverters 5 Volt, 12 Volt |
Gilway Technical Lamp |
| 202 |
1N6099 |
High conductance low leakage diode. Working inverse voltage 125 V. |
Fairchild Semiconductor |
| 203 |
1N617 |
115 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 204 |
1N618 |
115 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 205 |
1N626 |
35 V, 500 mW general purpose diode |
BKC International Electronics |
| 206 |
1N6268 |
7.5 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 207 |
1N6268A |
7.5 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 208 |
1N6268C |
7.5 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 209 |
1N6268CA |
7.5 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 210 |
1N627 |
75 V, 500 mW general purpose diode |
BKC International Electronics |
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