No. |
Part Name |
Description |
Manufacturer |
121 |
1N4775A |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
122 |
1N4776 |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
123 |
1N4776A |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
124 |
1N4777 |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
125 |
1N4777A |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
126 |
1N4778 |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
127 |
1N4778A |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
128 |
1N4779 |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
129 |
1N4779A |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
130 |
1N4780 |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
131 |
1N4780A |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
132 |
1N4781 |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
133 |
1N4781A |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
134 |
1N4782 |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
135 |
1N4782A |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
136 |
1N4783 |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
137 |
1N4783A |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
138 |
1N4784 |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
139 |
1N4784A |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
140 |
1N4785 |
8.5 volt temperature compensated zener reference diode |
Compensated Devices Incorporated |
141 |
1N499 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
142 |
1N5196 |
225 V, 500 mW silicon diode |
BKC International Electronics |
143 |
1N5222A |
2.5 V, 20 mA, zener diode |
Leshan Radio Company |
144 |
1N5222AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.5 V. Tolerance +-10%. |
Microsemi |
145 |
1N5222BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.5 V. Tolerance +-5%. |
Microsemi |
146 |
1N5222C |
2.5 V, 20 mA, zener diode |
Leshan Radio Company |
147 |
1N5222D |
2.5 V, 20 mA, zener diode |
Leshan Radio Company |
148 |
1N5222UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.5 V. |
Microsemi |
149 |
1N5236 |
500 mW silicon zener diode. Nominal zener voltage 7.5 V. |
Fairchild Semiconductor |
150 |
1N5236 |
500mW, 7.5 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
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