| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N314 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 62 |
1N3146 |
25 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 63 |
1N3155 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.065 V. 500 W. |
Motorola |
| 64 |
1N34 |
65 Volt Germanium Diode |
Micro Commercial Components |
| 65 |
1N3467 |
15 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 66 |
1N3468 |
15 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 67 |
1N3470 |
35 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 68 |
1N34A |
65 Volt Germanium Diode |
Micro Commercial Components |
| 69 |
1N3592 |
25 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 70 |
1N3595 |
125 V, 500 mW silicon switching diode |
BKC International Electronics |
| 71 |
1N3595-1 |
125 V, 500 mW silicon switching diode |
BKC International Electronics |
| 72 |
1N367 |
15 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 73 |
1N3773 |
25 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 74 |
1N3830 |
Zener regulator diode. Nom zener voltage 7.5 V. 1 W. |
Motorola |
| 75 |
1N4009 |
25 V, 500 mW ultra high speed diode |
BKC International Electronics |
| 76 |
1N4148 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 77 |
1N4149 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 78 |
1N4150-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
| 79 |
1N4151 |
500mW 75 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
| 80 |
1N4153-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
| 81 |
1N4154 |
25 V, 500 mW high speed diode |
BKC International Electronics |
| 82 |
1N4154 |
500mW 35 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
| 83 |
1N4154-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
| 84 |
1N4446 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 85 |
1N4447 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 86 |
1N4449 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 87 |
1N4449 |
High conductance ultra fast switching diode. Working inverse voltage 75 V. |
Fairchild Semiconductor |
| 88 |
1N4454 |
400mW 75 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
| 89 |
1N447 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 90 |
1N4523 |
15 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
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