No. |
Part Name |
Description |
Manufacturer |
211 |
MT5C1008DCJ-70L/883C |
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS |
Advanced Semiconductor |
212 |
MT5C1008DCJ-70L_883C |
128K x 8 SRAM with dual chip enable |
Austin Semiconductor |
213 |
MT5C1008DCJ-70L_IT |
128K x 8 SRAM with dual chip enable |
Austin Semiconductor |
214 |
MT5C1008DCJ-70L_XT |
128K x 8 SRAM with dual chip enable |
Austin Semiconductor |
215 |
MT5C1008SOJ-70/883C |
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS |
Advanced Semiconductor |
216 |
MT5C1008SOJ-70L/883C |
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS |
Advanced Semiconductor |
217 |
MT5C1009DCJ-70/883C |
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE |
Austin Semiconductor |
218 |
MT5C1009DCJ-70L_883C |
128K x 8 SRAM with chip and output enable |
Austin Semiconductor |
219 |
MT5C1009DCJ-70L_IT |
128K x 8 SRAM with chip and output enable |
Austin Semiconductor |
220 |
MT5C1009DCJ-70L_XT |
128K x 8 SRAM with chip and output enable |
Austin Semiconductor |
221 |
MT5C1009SOJ-70/883C |
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE |
Austin Semiconductor |
222 |
MT5C1009SOJ-70L_883C |
128K x 8 SRAM with chip and output enable |
Austin Semiconductor |
223 |
MT5C1009SOJ-70L_IT |
128K x 8 SRAM with chip and output enable |
Austin Semiconductor |
224 |
MT5C1009SOJ-70L_XT |
128K x 8 SRAM with chip and output enable |
Austin Semiconductor |
225 |
NN5118160AJ-70 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
226 |
NN5118160ALJ-70 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
227 |
PEEL18CV8J-7 |
CMOS Programmable Electrically Erasable Logic Device |
International CMOS Technology |
228 |
QSG0115UDJ-7 |
DUAL COMMON CATHODE SCHOTTKY DIODE |
Diodes |
229 |
SFPJ-73 |
Schottky Barrier Diodes (Surface Mount) 30V |
Sanken |
230 |
TC514100AJ-70 |
70 ns, 1-bit generation dynamic RAM |
TOSHIBA |
231 |
TC514100ASJ-70 |
70 ns, 1-bit generation dynamic RAM |
TOSHIBA |
232 |
TC514101AJ-70 |
70 ns, 1-bit generation dynamic RAM |
TOSHIBA |
233 |
TC514101ASJ-70 |
70 ns, 1-bit generation dynamic RAM |
TOSHIBA |
234 |
TC514260BJ-70 |
70ns; V(in/out): -1 to +7V; 700mW; 50mA; 262,144 word x 16 bit dynamic RAM |
TOSHIBA |
235 |
TC514400AJ-70 |
70 ns, 4-bit generation dynamic RAM |
TOSHIBA |
236 |
TC514400ASJ-70 |
70 ns, 4-bit generation dynamic RAM |
TOSHIBA |
237 |
TC514402AJ-70 |
70 ns, 4-bit generation dynamic RAM |
TOSHIBA |
238 |
TC514402ASJ-70 |
70 ns, 4-bit generation dynamic RAM |
TOSHIBA |
239 |
TC514410ASJ-70 |
70 ns, 4-bit generation dynamic RAM |
TOSHIBA |
240 |
TMS416409ADJ-70 |
4194304 by 4-bit extended data out dynamic random-access memories, 5.0V power supply, 70ns |
National Semiconductor |
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