No. |
Part Name |
Description |
Manufacturer |
91 |
HM51S4800CJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
92 |
HM51S4800CLJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
93 |
HM51W16165J-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
94 |
HM51W16165LJ-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
95 |
HM51W18165J-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
96 |
HM51W18165LJ-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
97 |
HM538123BJ-7 |
70ns; V(cc): -0.5 to +7.0V; 1M VRAM (128 -kword x 8-bit) |
Hitachi Semiconductor |
98 |
HM538253J-7 |
70ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
99 |
HMN1288J-70 |
Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit),34Pin-JLCC, 5V |
etc |
100 |
HMN1288J-70I |
Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit),34Pin-JLCC, 5V |
etc |
101 |
HY51V17403HGJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
102 |
HY51V17403HGLJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
103 |
HY51V18163HGJ-7 |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
104 |
HY51V18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
105 |
HY51VS17403HGJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
106 |
HY51VS17403HGLJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
107 |
HY51VS18163HGJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
108 |
HY51VS18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
109 |
HY534256AJ-70 |
256K x 4-bit CMOS DRAM, 70ns |
Hynix Semiconductor |
110 |
HY534256ALJ-70 |
256K x 4-bit CMOS DRAM, 70ns, low power |
Hynix Semiconductor |
111 |
HY62256AJ-70 |
32Kx8bit CMOS SRAM, standby current=1mA, 70ns |
Hynix Semiconductor |
112 |
HY62256ALJ-70 |
32Kx8bit CMOS SRAM, standby current=100uA, 70ns |
Hynix Semiconductor |
113 |
HY62256ALLJ-70 |
32Kx8bit CMOS SRAM, standby current=25uA, 70ns |
Hynix Semiconductor |
114 |
HYB3116160BSJ-70 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
115 |
HYB3116400BJ-70 |
3.3V 4M x 4-Bit Dynamic RAM |
Siemens |
116 |
HYB3116405BJ-70 |
3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
117 |
HYB3117400BJ-70 |
3.3V 4M x 4-Bit Dynamic RAM |
Siemens |
118 |
HYB3117405BJ-70 |
3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
119 |
HYB3117800BSJ-70 |
2M x 8-Bit Dynamic RAM |
Siemens |
120 |
HYB3117805BJ-70 |
2M x 8bit EDO-DRAM |
Siemens |
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