No. |
Part Name |
Description |
Manufacturer |
61 |
GS71116AJ-7I |
7ns 64K x 16 1Mb asynchronous SRAM |
GSI Technology |
62 |
GS72108AJ-7 |
7ns 256K x 8 2Mb asynchronous SRAM |
GSI Technology |
63 |
GS72108AJ-7I |
7ns 256K x 8 2Mb asynchronous SRAM |
GSI Technology |
64 |
GS72116AJ-7 |
128K x 16 2Mb Asynchronous SRAM |
GSI Technology |
65 |
GS72116AJ-7I |
128K x 16 2Mb Asynchronous SRAM |
GSI Technology |
66 |
GS74104AJ-7 |
7ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
67 |
GS74108AJ-7 |
7ns 512K x 8 4Mb asynchronous SRAM |
GSI Technology |
68 |
GS74108AJ-7I |
7ns 512K x 8 4Mb asynchronous SRAM |
GSI Technology |
69 |
GS74116AJ-7 |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
70 |
GS74116AJ-7I |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
71 |
GS74116AJ-7IT |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
72 |
GS74116AJ-7T |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
73 |
HM5117805J-7 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
Elpida Memory |
74 |
HM514260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
75 |
HM514260ALJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
76 |
HM514260CJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
77 |
HM514260CLJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
78 |
HM514400AJ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
79 |
HM514400ALJ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
80 |
HM514400ASLJ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
81 |
HM514800AJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
82 |
HM514800ALJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
83 |
HM514800CJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
84 |
HM514800CLJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
85 |
HM51S4260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
86 |
HM51S4260ALJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
87 |
HM51S4260CJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
88 |
HM51S4260CLJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
89 |
HM51S4800AJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
90 |
HM51S4800ALJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
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