| No. |
Part Name |
Description |
Manufacturer |
| 151 |
KM416C1204BJ-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
| 152 |
KM416C254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
| 153 |
KM416C256DJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V |
Samsung Electronic |
| 154 |
KM416C256DLJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability |
Samsung Electronic |
| 155 |
KM416V1000BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 156 |
KM416V1004AJ-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
| 157 |
KM416V1004BJ-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
| 158 |
KM416V1200BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 159 |
KM416V1204BJ-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
| 160 |
KM416V254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
| 161 |
KM416V256DJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V |
Samsung Electronic |
| 162 |
KM416V256DLJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability |
Samsung Electronic |
| 163 |
KM41C4000DJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 70ns |
Samsung Electronic |
| 164 |
KM41C4000DLJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns |
Samsung Electronic |
| 165 |
KM41V4000DJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 70ns |
Samsung Electronic |
| 166 |
KM41V4000DLJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 70ns |
Samsung Electronic |
| 167 |
KM44C1000DJ-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 168 |
KM44V1000DJ-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 169 |
LC321664BJ-70 |
1 MEG (65536 words x 16 bit) DRAM, fast page mode, byte write |
SANYO |
| 170 |
LC321667BJ-70 |
1 MEG (65536 words x 16 bit) DRAM, EDO page mode, byte write |
SANYO |
| 171 |
LC322260J-70 |
2 MEG (131072 words x 16 bits) DRAM fast page mode, byte reed/write |
SANYO |
| 172 |
LC322271J-70 |
2MEG (131072words x 16bit) DRAM fast page mode, byte write |
SANYO |
| 173 |
M5M417400CJ-7 |
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 174 |
M5M417400CJ-7S |
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 175 |
M5M44260CJ-7 |
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 176 |
M5M44260CJ-7S |
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 177 |
M5M44265CJ-7 |
EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 178 |
M5M44265CJ-7S |
EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 179 |
M5M44405CJ-7 |
EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 180 |
M5M44405CJ-7S |
EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM |
Mitsubishi Electric Corporation |
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