No. |
Part Name |
Description |
Manufacturer |
2311 |
P2181B-08TT |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2312 |
P2182A-08SR |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2313 |
P2182A-08ST |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2314 |
P2182A-08TR |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2315 |
P2182A-08TT |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2316 |
P2182B-08TR |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2317 |
P2182B-08TT |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2318 |
P2184A-08SR |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2319 |
P2184A-08ST |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2320 |
P2184A-08TR |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2321 |
P2184A-08TT |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2322 |
P2184B-08TR |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2323 |
P2184B-08TT |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2324 |
P2532-01 |
PbS photoconductive detector |
Hamamatsu Corporation |
2325 |
P2680-02 |
PbSe photoconductive detector |
Hamamatsu Corporation |
2326 |
P2680-03 |
PbSe photoconductive detector |
Hamamatsu Corporation |
2327 |
P2682-01 |
PbS photoconductive detector |
Hamamatsu Corporation |
2328 |
P2748 |
MCT photoconductive detector |
Hamamatsu Corporation |
2329 |
P2748-40 |
MCT photoconductive detector |
Hamamatsu Corporation |
2330 |
P2748-41 |
MCT photoconductive detector |
Hamamatsu Corporation |
2331 |
P2748-42 |
MCT photoconductive detector |
Hamamatsu Corporation |
2332 |
P2750 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
2333 |
P2750-06 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
2334 |
P2750-08 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
2335 |
P2781 |
General Purpose EMI Reduction IC |
ON Semiconductor |
2336 |
P2811 |
Low Power EMI Reduction IC |
ON Semiconductor |
2337 |
P2811A-08SR |
3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC |
Alliance Semiconductor |
2338 |
P2811A-08ST |
3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC |
Alliance Semiconductor |
2339 |
P2811A-08TR |
3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC |
Alliance Semiconductor |
2340 |
P2811A-08TT |
3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC |
Alliance Semiconductor |
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