| No. |
Part Name |
Description |
Manufacturer |
| 2371 |
P3P816711A |
Spread Spectrum Peak EMI Reduction Device |
ON Semiconductor |
| 2372 |
P3P8203A |
General Purpose Peak EMI Reduction IC |
ON Semiconductor |
| 2373 |
P3P8220A |
General Purpose Peak EMI Reduction IC |
ON Semiconductor |
| 2374 |
P3P85R01A |
3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE™ Peak EMI Reduction Device |
ON Semiconductor |
| 2375 |
P3PS550AH |
General Purpose Peak EMI Reduction IC |
ON Semiconductor |
| 2376 |
P3PS850BH |
TIMING-SAFE ™ Peak EMI Reduction IC |
ON Semiconductor |
| 2377 |
P3PSL450A |
Low Voltage, Timing-Safe™ Peak EMI Reduction IC |
ON Semiconductor |
| 2378 |
P4249-08 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 2379 |
P467 |
CdS photoconductive cell |
Hamamatsu Corporation |
| 2380 |
P5274 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 2381 |
P5274-01 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 2382 |
P5274-50 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 2383 |
P534 |
CdS photoconductive cell |
Hamamatsu Corporation |
| 2384 |
P621 |
CdS photoconductive cell |
Hamamatsu Corporation |
| 2385 |
P6606 |
InSb photoconductive detector |
Hamamatsu Corporation |
| 2386 |
P6606-110 |
InSb photoconductive detector |
Hamamatsu Corporation |
| 2387 |
P6606-210 |
InSb photoconductive detector |
Hamamatsu Corporation |
| 2388 |
P6606-305 |
InSb photoconductive detector |
Hamamatsu Corporation |
| 2389 |
P6606-310 |
InSb photoconductive detector |
Hamamatsu Corporation |
| 2390 |
P6606-320 |
InSb photoconductive detector |
Hamamatsu Corporation |
| 2391 |
P687-02 |
CdS photoconductive cell |
Hamamatsu Corporation |
| 2392 |
P6P82PS01A |
Peak EMI Reduction IC for Power Systems |
ON Semiconductor |
| 2393 |
P722-10R |
CbS photoconductive cell |
Hamamatsu Corporation |
| 2394 |
P722-7R |
CbS photoconductive cell |
Hamamatsu Corporation |
| 2395 |
P791-11 |
PbSe photoconductive detector |
Hamamatsu Corporation |
| 2396 |
P791-13 |
PbSe photoconductive detector |
Hamamatsu Corporation |
| 2397 |
P9217 |
PbS photoconductive detector |
Hamamatsu Corporation |
| 2398 |
P930 |
CdS photoconductive cell |
Hamamatsu Corporation |
| 2399 |
PA2423MB |
2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information |
SiGe Semiconductor |
| 2400 |
PA2423MB-EV |
2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information |
SiGe Semiconductor |
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