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Datasheets for DUCTI

Datasheets found :: 2962
Page: | 75 | 76 | 77 | 78 | 79 | 80 | 81 | 82 | 83 |
No. Part Name Description Manufacturer
2341 P2812A-08SR 3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC Alliance Semiconductor
2342 P2812A-08ST 3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC Alliance Semiconductor
2343 P2812A-08TR 3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC Alliance Semiconductor
2344 P2812A-08TT 3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC Alliance Semiconductor
2345 P2814A-08SR 3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC Alliance Semiconductor
2346 P2814A-08ST 3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC Alliance Semiconductor
2347 P2814A-08TR 3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC Alliance Semiconductor
2348 P2814A-08TT 3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC Alliance Semiconductor
2349 P3207-05 PbSe photoconductive detector Hamamatsu Corporation
2350 P3257 MCT photoconductive detector Hamamatsu Corporation
2351 P3257-01 MCT photoconductive detector Hamamatsu Corporation
2352 P3257-10 MCT photoconductive detector Hamamatsu Corporation
2353 P3257-25 MCT photoconductive detector Hamamatsu Corporation
2354 P3257-30 0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation Hamamatsu Corporation
2355 P3257-31 0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation Hamamatsu Corporation
2356 P3257-50 Allowable current:40mA; MCT photoconductive detector: dewar type detector with high sensitivity and high-speed response in long wavelength range Hamamatsu Corporation
2357 P368 CdS photoconductive cell Hamamatsu Corporation
2358 P380 CdS photoconductive cell Hamamatsu Corporation
2359 P380-7R CbS photoconductive cell Hamamatsu Corporation
2360 P3872 CdS photoconductive cell Hamamatsu Corporation
2361 P3981 0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation Hamamatsu Corporation
2362 P3981-01 0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation Hamamatsu Corporation
2363 P3I2005A General Purpose Peak EMI Reduction IC ON Semiconductor
2364 P3MS650100H 1.8V/2.5V/3.3V, LVCMOS Peak EMI Reduction Clock Generator ON Semiconductor
2365 P3MS650103H 1.8V/2.5V/3.3V, LVCMOS Peak EMI Reduction Clock Generator ON Semiconductor
2366 P3MXP1039PC-V Photoconductive Detectors Microsemi
2367 P3P2043B LCD Panel EMI Reduction IC ON Semiconductor
2368 P3P623S00 TIMING-SAFE ™ Peak EMI Reduction IC ON Semiconductor
2369 P3P76Z11D Low Voltage, Timing-Safe™ Peak EMI reduction IC ON Semiconductor
2370 P3P8163A Spread Spectrum Peak EMI Reduction Device, LVCMOS, 3.3 V ON Semiconductor


Datasheets found :: 2962
Page: | 75 | 76 | 77 | 78 | 79 | 80 | 81 | 82 | 83 |



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