No. |
Part Name |
Description |
Manufacturer |
241 |
2N4032 |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
242 |
2N4033 |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
243 |
2N4901 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
244 |
2N4902 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
245 |
2N4903 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
246 |
2N4904 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
247 |
2N4905 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
248 |
2N4906 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
249 |
2N5109 |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
250 |
2N5109A |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
251 |
2N5109B |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
252 |
2N5190 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
253 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
254 |
2N5191 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
255 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
256 |
2N5192 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
257 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
258 |
2N5193 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
259 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
260 |
2N5194 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
261 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
262 |
2N5195 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
263 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
264 |
2N5470 |
The Use of Coaxial-Package Transistors in Microstripline Circuits - Application Note |
RCA Solid State |
265 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
266 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
267 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
268 |
2N5781 |
Silicon P-N-P epitaxial-base transistor. -80V, 10W. |
General Electric Solid State |
269 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
270 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
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