No. |
Part Name |
Description |
Manufacturer |
331 |
2N6111 |
Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package |
SGS-ATES |
332 |
2N6121 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. |
General Electric Solid State |
333 |
2N6121 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
334 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
335 |
2N6122 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
336 |
2N6122 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
337 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
338 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
339 |
2N6123 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
340 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
341 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
342 |
2N6124 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
343 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
344 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
345 |
2N6125 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
346 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
347 |
2N6126 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
348 |
2N6126 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
349 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
350 |
2N6246 |
Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. |
General Electric Solid State |
351 |
2N6247 |
Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. |
General Electric Solid State |
352 |
2N6248 |
Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. |
General Electric Solid State |
353 |
2N6261 |
HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR |
SemeLAB |
354 |
2N6288 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
355 |
2N6288 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
356 |
2N6288 |
Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package |
SGS-ATES |
357 |
2N6289 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
358 |
2N6289 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
359 |
2N6290 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
360 |
2N6290 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
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