| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2N5784 |
Silicon N-P-N epitaxial-base transistor. 80V, 10W. |
General Electric Solid State |
| 272 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
| 273 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
| 274 |
2N5875 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 275 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 276 |
2N5876 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 277 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 278 |
2N5877 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 279 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 280 |
2N5878 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 281 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 282 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 283 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 284 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 285 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 286 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 287 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 288 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 289 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 290 |
2N6038 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 291 |
2N6038 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 292 |
2N6039 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 293 |
2N6039 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 294 |
2N6050 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 295 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 296 |
2N6051 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 297 |
2N6051 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 298 |
2N6052 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 299 |
2N6052 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 300 |
2N6053 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
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