No. |
Part Name |
Description |
Manufacturer |
2491 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
2492 |
2N3055 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
2493 |
2N3055 |
NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES |
Siemens |
2494 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
2495 |
2N3114 |
NPN silicon transistor designed for high-voltage, low power video amplifier applications |
Motorola |
2496 |
2N3114CSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
2497 |
2N3118 |
Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment |
RCA Solid State |
2498 |
2N3137 |
NPN silicon transistor for large signal VHF and UHF applications |
Motorola |
2499 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
2500 |
2N319 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
2501 |
2N320 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
2502 |
2N3209CSM |
HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
2503 |
2N321 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
2504 |
2N3210 |
NPN silicon high frequency switching transistor for industrial service |
Motorola |
2505 |
2N3211 |
NPN silicon high frequency switching transistor for industrial service |
Motorola |
2506 |
2N322 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
2507 |
2N3227 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
2508 |
2N323 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
2509 |
2N324 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
2510 |
2N3252 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
2511 |
2N3253 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
2512 |
2N3262 |
Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers |
RCA Solid State |
2513 |
2N3279 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
2514 |
2N327A |
PNP planar for alloy transistor replacements - silicon |
Sprague |
2515 |
2N327B |
PNP planar for alloy transistor replacements - silicon |
Sprague |
2516 |
2N3280 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
2517 |
2N3281 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
2518 |
2N3282 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
2519 |
2N3283 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
2520 |
2N3284 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
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