| No. |
Part Name |
Description |
Manufacturer |
| 2551 |
2N3409 |
NPN silicon annular Star dual transistors for differential amplifiers applications |
Motorola |
| 2552 |
2N3410 |
NPN silicon annular Star dual transistors for differential amplifiers applications |
Motorola |
| 2553 |
2N3411 |
NPN silicon annular Star dual transistors for differential amplifiers applications |
Motorola |
| 2554 |
2N3418 |
Planar transistor for switching applications |
SGS-ATES |
| 2555 |
2N3419 |
Planar transistor for switching applications |
SGS-ATES |
| 2556 |
2N3420 |
Planar transistor for switching applications |
SGS-ATES |
| 2557 |
2N3421 |
Planar transistor for switching applications |
SGS-ATES |
| 2558 |
2N3423 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 2559 |
2N3424 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 2560 |
2N3425 |
Dual NPN silicon transistor designed for use as a high-frequency sense amplifier |
Motorola |
| 2561 |
2N3439CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2562 |
2N3439CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2563 |
2N3440CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2564 |
2N3440S |
Silicon planar epitaxial NPN transistor intended for high voltage switching and linear amplifier applications |
SGS-ATES |
| 2565 |
2N3440S |
Planar transistor for switching applications |
SGS-ATES |
| 2566 |
2N3444 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
| 2567 |
2N3485 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 2568 |
2N3485A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 2569 |
2N3486 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 2570 |
2N3486A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 2571 |
2N3494 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 2572 |
2N3495 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 2573 |
2N3496 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 2574 |
2N3497 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 2575 |
2N3501CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2576 |
2N350A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 2577 |
2N3510 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 2578 |
2N3511 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 2579 |
2N3515 |
Dual NPN silicon transistor for use as a differential amplifier |
Motorola |
| 2580 |
2N3518 |
Dual NPN silicon transistor for use as a differential amplifier |
Motorola |
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