| No. |
Part Name |
Description |
Manufacturer |
| 2581 |
2N351A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 2582 |
2N3544 |
NPN silicon transistor for VHF and UHF oscillator applications |
Motorola |
| 2583 |
2N3553 |
Silicon high frequency epitaxial planar transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 2584 |
2N3553 |
Silicon NPN overlay epitaxial planar transistor for VHF/UHF transmitting applications |
ICCE |
| 2585 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 2586 |
2N3553 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
| 2587 |
2N3632 |
Silicon NPN epitaxial planar high frequency power transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 2588 |
2N3632 |
Silicon NPN overlay epitaxial planar transistor for VHF transmitting applications |
ICCE |
| 2589 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 2590 |
2N3632 |
Silicon Epitaxial Planar Overlay Transistor, intended for VHF transmitting |
Philips |
| 2591 |
2N3632 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
| 2592 |
2N3637CSM |
PNP SILICON TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2593 |
2N3647 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 2594 |
2N3648 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 2595 |
2N3664 |
NPN silicon transistor for power amplifier and driver applications to 500MHz |
Motorola |
| 2596 |
2N3700DCSM |
HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2597 |
2N3713 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 2598 |
2N3713 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2599 |
2N3714 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 2600 |
2N3714 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2601 |
2N3715 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 2602 |
2N3715 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2603 |
2N3716 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 2604 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2605 |
2N3722 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
| 2606 |
2N3723 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
| 2607 |
2N3733 |
NPN silicon transistor designed for amplifier, frequency multiplier and oscillator applications |
Motorola |
| 2608 |
2N376A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 2609 |
2N3789 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 2610 |
2N3789 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
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