| No. |
Part Name |
Description |
Manufacturer |
| 2521 |
1N5940B |
1.5W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
| 2522 |
1N5940B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 2523 |
1N5940B |
43 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2524 |
1N5940B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2525 |
1N5940C |
1.5 W, silicon zener diode. Zener voltage 43V. Test current 8.7 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 2526 |
1N5940D |
1.5 W, silicon zener diode. Zener voltage 43V. Test current 8.7 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 2527 |
1N5941 |
1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 2528 |
1N5941A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 2529 |
1N5941A |
1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 2530 |
1N5941B |
1.5W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
| 2531 |
1N5941B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 2532 |
1N5941B |
47 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2533 |
1N5941B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2534 |
1N5941C |
1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 2535 |
1N5941D |
1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 2536 |
1N5942 |
1.5 W, silicon zener diode. Zener voltage 51 V. Test current 7.3 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 2537 |
1N5942A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 2538 |
1N5942A |
1.5 W, silicon zener diode. Zener voltage 51 V. Test current 7.3 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 2539 |
1N5942B |
1.5W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
| 2540 |
1N5942B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 2541 |
1N5942B |
51 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2542 |
1N5942B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2543 |
1N5942C |
1.5 W, silicon zener diode. Zener voltage 51 V. Test current 7.3 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 2544 |
1N5942D |
1.5 W, silicon zener diode. Zener voltage 51 V. Test current 7.3 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 2545 |
1N5943 |
1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 2546 |
1N5943A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 2547 |
1N5943A |
1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 2548 |
1N5943B |
1.5W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
| 2549 |
1N5943B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 2550 |
1N5943B |
56 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
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