| No. |
Part Name |
Description |
Manufacturer |
| 2611 |
1N5950B |
1.5W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
| 2612 |
1N5950B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 2613 |
1N5950B |
110 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2614 |
1N5950B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2615 |
1N5950C |
1.5 W, silicon zener diode. Zener voltage 110 V. Test current 3.4 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 2616 |
1N5950D |
1.5 W, silicon zener diode. Zener voltage 110 V. Test current 3.4 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 2617 |
1N5951 |
1.5 W, silicon zener diode. Zener voltage 120 V. Test current 3.1 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 2618 |
1N5951A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 2619 |
1N5951A |
1.5 W, silicon zener diode. Zener voltage 120 V. Test current 3.1 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 2620 |
1N5951B |
1.5W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
| 2621 |
1N5951B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 2622 |
1N5951B |
120 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2623 |
1N5951B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2624 |
1N5951C |
1.5 W, silicon zener diode. Zener voltage 120 V. Test current 3.1 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 2625 |
1N5951D |
1.5 W, silicon zener diode. Zener voltage 120 V. Test current 3.1 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 2626 |
1N5952 |
1.5 W, silicon zener diode. Zener voltage 130 V. Test current 2.9 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 2627 |
1N5952A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 2628 |
1N5952A |
1.5 W, silicon zener diode. Zener voltage 130 V. Test current 2.9 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 2629 |
1N5952B |
1.5W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
| 2630 |
1N5952B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 2631 |
1N5952B |
130 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2632 |
1N5952B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2633 |
1N5952C |
1.5 W, silicon zener diode. Zener voltage 130 V. Test current 2.9 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 2634 |
1N5952D |
1.5 W, silicon zener diode. Zener voltage 130 V. Test current 2.9 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 2635 |
1N5953 |
1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 2636 |
1N5953A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 2637 |
1N5953A |
1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 2638 |
1N5953B |
1.5W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
| 2639 |
1N5953B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 2640 |
1N5953B |
150 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
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