| No. |
Part Name |
Description |
Manufacturer |
| 2641 |
1N5953B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2642 |
1N5953C |
1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 2643 |
1N5953D |
1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 2644 |
1N5954 |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 2645 |
1N5954A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 2646 |
1N5954A |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 2647 |
1N5954B |
1.5W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
| 2648 |
1N5954B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 2649 |
1N5954B |
160 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2650 |
1N5954B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2651 |
1N5954C |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 2652 |
1N5954D |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 2653 |
1N5955 |
1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 2654 |
1N5955A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 2655 |
1N5955A |
1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 2656 |
1N5955B |
1.5W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
| 2657 |
1N5955B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 2658 |
1N5955B |
180 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2659 |
1N5955B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2660 |
1N5955C |
1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 2661 |
1N5955D |
1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 2662 |
1N5956 |
1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 2663 |
1N5956A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 2664 |
1N5956A |
1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 2665 |
1N5956B |
1.5W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
| 2666 |
1N5956B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 2667 |
1N5956B |
200 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2668 |
1N5956B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2669 |
1N5956C |
1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 2670 |
1N5956D |
1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| | | |
