| No. |
Part Name |
Description |
Manufacturer |
| 2551 |
2N2916DCSM |
DUAL NPN PLANAR TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2552 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2553 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2554 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2555 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2556 |
2N2920DCSM |
DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2557 |
2N2942 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 2558 |
2N2943 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 2559 |
2N2944 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 2560 |
2N2945 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 2561 |
2N2946 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 2562 |
2N2955 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2563 |
2N2956 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2564 |
2N2957 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2565 |
2N2958 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 2566 |
2N2959 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 2567 |
2N2962 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 2568 |
2N2963 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 2569 |
2N2964 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 2570 |
2N2965 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 2571 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2572 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2573 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2574 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2575 |
2N2976 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2576 |
2N2977 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2577 |
2N2978 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2578 |
2N2979 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2579 |
2N3009 |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS |
Central Semiconductor |
| 2580 |
2N3009 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
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