| No. |
Part Name |
Description |
Manufacturer |
| 2671 |
2N3440 |
HIGH VOLTAGE AMPLIFIERS |
Boca Semiconductor Corporation |
| 2672 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 2673 |
2N3440 |
High-voltage silicon N-P-N planar transistor. |
General Electric Solid State |
| 2674 |
2N3440 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 2675 |
2N3440 |
Silicon NPN High Voltage Transistor |
IPRS Baneasa |
| 2676 |
2N3440 |
HIGH VOLTAGE NPN TRANSISTORS |
SemeLAB |
| 2677 |
2N3440CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2678 |
2N3440CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2679 |
2N3440S |
Silicon planar epitaxial NPN transistor intended for high voltage switching and linear amplifier applications |
SGS-ATES |
| 2680 |
2N3442 |
HIGH-POWER INDUSTRIAL TRANSISTORS |
Boca Semiconductor Corporation |
| 2681 |
2N3442 |
High power industrial transistor |
Comset Semiconductors |
| 2682 |
2N3442 |
High voltage silicon N-P-N transistor. 160V, 117W. |
General Electric Solid State |
| 2683 |
2N3442 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 2684 |
2N3442 |
Silicon n-p-n high power transistor |
Mullard |
| 2685 |
2N3442 |
High voltage hometaxial NPN transistor in Jedec TO-3 metal case |
SGS-ATES |
| 2686 |
2N3442 |
Silicon HOMETAXIAL NPN transistor, high power, high voltage switch |
SGS-ATES |
| 2687 |
2N3442 |
Silicon HOMETAXIAL NPN transistor, high power, high voltage switch |
SGS-ATES |
| 2688 |
2N3442-D |
High-Power Industrial Transistors |
ON Semiconductor |
| 2689 |
2N3444 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
| 2690 |
2N3444 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2691 |
2N3485 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 2692 |
2N3485A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 2693 |
2N3486 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 2694 |
2N3486A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 2695 |
2N3494 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 2696 |
2N3495 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 2697 |
2N3496 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 2698 |
2N3497 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 2699 |
2N3498 |
NPN silicon annular transistor high-voltage, low power |
Motorola |
| 2700 |
2N3500 |
NPN silicon annular transistor high-voltage, low power |
Motorola |
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