| No. |
Part Name |
Description |
Manufacturer |
| 2641 |
2N3279 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 2642 |
2N3280 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 2643 |
2N3281 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 2644 |
2N3282 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 2645 |
2N3299 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2646 |
2N3300 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2647 |
2N3301 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2648 |
2N3302 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2649 |
2N3303 |
NPN silicon annular transistor designet for high-speed, high-current switching and driving applications |
Motorola |
| 2650 |
2N3303 |
NPN silicon annular transistor designet for high-speed, high-current switching and driving applications |
Motorola |
| 2651 |
2N3303 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2652 |
2N3320 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 2653 |
2N3321 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 2654 |
2N3322 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 2655 |
2N3375 |
Silicon NPN epitaxial high frequency power transistor for VHF and UHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 2656 |
2N3375 |
High Frequency NPN transistor |
CCSIT-CE |
| 2657 |
2N3375 |
NPN Silicon High-Frequency Transistor |
Siemens |
| 2658 |
2N3423 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 2659 |
2N3424 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 2660 |
2N3425 |
Dual NPN silicon transistor designed for use as a high-frequency sense amplifier |
Motorola |
| 2661 |
2N3426 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2662 |
2N3439 |
HIGH VOLTAGE AMPLIFIERS |
Boca Semiconductor Corporation |
| 2663 |
2N3439 |
High-voltage silicon N-P-N planar transistor. |
General Electric Solid State |
| 2664 |
2N3439 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 2665 |
2N3439 |
Silicon NPN High Voltage Transistor |
IPRS Baneasa |
| 2666 |
2N3439 |
HIGH VOLTAGE NPN TRANSISTORS |
SemeLAB |
| 2667 |
2N3439CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2668 |
2N3439CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2669 |
2N3439CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2670 |
2N3439CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
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