| No. |
Part Name |
Description |
Manufacturer |
| 2701 |
2N3501 |
NPN silicon annular transistor high-voltage, low power |
Motorola |
| 2702 |
2N3501CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2703 |
2N3501CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2704 |
2N3502 |
PNP Silicon High Current Switching Transistor |
ITT Semiconductors |
| 2705 |
2N3502 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2706 |
2N3503 |
PNP Silicon High Current Switching Transistor |
ITT Semiconductors |
| 2707 |
2N3503 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2708 |
2N3504 |
PNP Silicon High Current Switching Transistor |
ITT Semiconductors |
| 2709 |
2N3504 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2710 |
2N3505 |
PNP Silicon High Current Switching Transistor |
ITT Semiconductors |
| 2711 |
2N3505 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2712 |
2N3510 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 2713 |
2N3511 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 2714 |
2N3553 |
Silicon high frequency epitaxial planar transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 2715 |
2N3553 |
High Frequency NPN transistor |
CCSIT-CE |
| 2716 |
2N3553 |
High frequency NPN transistor |
FERRANTI |
| 2717 |
2N3553 |
NPN silicon high frequency transistor 2.5W - 175MHz |
Motorola |
| 2718 |
2N3570 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
Advanced Semiconductor |
| 2719 |
2N3570 |
High frequency NPN transistor |
FERRANTI |
| 2720 |
2N3571 |
High frequency NPN transistor |
FERRANTI |
| 2721 |
2N3572 |
High frequency NPN transistor |
FERRANTI |
| 2722 |
2N3583 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 2723 |
2N3583 |
High-voltage silicon N-P-N transistor. |
General Electric Solid State |
| 2724 |
2N3583 |
Complementary Medium-Power High Voltage Power Transistor 35W 1A |
Motorola |
| 2725 |
2N3584 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 2726 |
2N3584 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
| 2727 |
2N3584 |
Power NPN transistor - High Voltage |
SESCOSEM |
| 2728 |
2N3585 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 2729 |
2N3585 |
High-voltage silicon N-P-N transistor. |
General Electric Solid State |
| 2730 |
2N3585 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
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