| No. |
Part Name |
Description |
Manufacturer |
| 2611 |
2N2484 |
High frequency transistor |
mble |
| 2612 |
2N2484 |
High frequency transistor |
mble |
| 2613 |
2N2484A |
NPN Transistor General Purpose, low noise, low level amplifier, high current gain |
Amelco Semiconductor |
| 2614 |
2N2484CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2615 |
2N2484CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2616 |
2N2487 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 2617 |
2N2488 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 2618 |
2N2489 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 2619 |
2N2537 |
NPN silicon annular Star transistor for high-speed switching |
Motorola |
| 2620 |
2N2537 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 2621 |
2N2538 |
NPN silicon annular Star transistor for high-speed switching |
Motorola |
| 2622 |
2N2538 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 2623 |
2N2539 |
NPN silicon annular Star transistor for high-speed switching |
Motorola |
| 2624 |
2N2539 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 2625 |
2N2540 |
NPN silicon annular Star transistor for high-speed switching |
Motorola |
| 2626 |
2N2540 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 2627 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 2628 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 2629 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 2630 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 2631 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 2632 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 2633 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 2634 |
2N2586 |
NPN Transistor General Purpose, low noise, high current gain, low leakage |
Amelco Semiconductor |
| 2635 |
2N2604 |
PNP silicon annular transistor, low level, low noise, high gain |
Motorola |
| 2636 |
2N2605 |
PNP silicon annular transistor, low level, low noise, high gain |
Motorola |
| 2637 |
2N2635 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2638 |
2N2708 |
NPN transistor RF/IF Amplifier, high power gain, low capacitance |
Amelco Semiconductor |
| 2639 |
2N2710 |
NPN small signal high speed low power saturated switch transistor. |
Fairchild Semiconductor |
| 2640 |
2N2728 |
PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries |
Motorola |
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