| No. |
Part Name |
Description |
Manufacturer |
| 2731 |
2N2976 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2732 |
2N2977 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2733 |
2N2978 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2734 |
2N2979 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2735 |
2N3009 |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS |
Central Semiconductor |
| 2736 |
2N3009 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2737 |
2N3010 |
NPN High Current General Purpose Medium Speed Amplifiers |
Semicoa Semiconductor |
| 2738 |
2N3011 |
High-Speed NPN Silicon saturated Switching Transistor |
ITT Semiconductors |
| 2739 |
2N3012 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2740 |
2N3013 |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS |
Central Semiconductor |
| 2741 |
2N3013 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2742 |
2N3014 |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS |
Central Semiconductor |
| 2743 |
2N3015 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 2744 |
2N3019 |
HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS |
SGS Thomson Microelectronics |
| 2745 |
2N3019 |
HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS |
SGS Thomson Microelectronics |
| 2746 |
2N3019CSM |
HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2747 |
2N3019CSM |
HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2748 |
2N3053 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 2749 |
2N3055 |
Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiers |
AEG-TELEFUNKEN |
| 2750 |
2N3055 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 2751 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
| 2752 |
2N3055 |
Silicon n-p-n high power transistor |
Mullard |
| 2753 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 2754 |
2N3055-D |
Complementary Silicon High-Power Transistors |
ON Semiconductor |
| 2755 |
2N3055/1 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 2756 |
2N3055/10 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 2757 |
2N3055/2 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 2758 |
2N3055/3 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 2759 |
2N3055/4 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 2760 |
2N3055/5 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
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