| No. |
Part Name |
Description |
Manufacturer |
| 2761 |
2N3055/6 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 2762 |
2N3055/7 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 2763 |
2N3055/8 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 2764 |
2N3055/9 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 2765 |
2N3055A |
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 2766 |
2N3055A-D |
Complementary Silicon High-Power Transistors |
ON Semiconductor |
| 2767 |
2N3055H |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 2768 |
2N3055U |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 2769 |
2N3055U |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 2770 |
2N3055V |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 2771 |
2N3055V |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 2772 |
2N3055W |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 2773 |
2N3073 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2774 |
2N3114 |
NPN silicon transistor designed for high-voltage, low power video amplifier applications |
Motorola |
| 2775 |
2N3114CSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
| 2776 |
2N3115 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 2777 |
2N3116 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 2778 |
2N3119 |
High-Power Silicon NPN Planar RF Tranzistor |
RCA Solid State |
| 2779 |
2N3121 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2780 |
2N3209 |
HIGH SPEED SATURATED SWITCHES |
SGS Thomson Microelectronics |
| 2781 |
2N3209 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2782 |
2N3209 |
HIGH-SPEED SATURATED SWITCHES |
ST Microelectronics |
| 2783 |
2N3209CSM |
HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2784 |
2N3209CSM |
HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2785 |
2N3209DCSM |
DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
SemeLAB |
| 2786 |
2N3210 |
NPN silicon high frequency switching transistor for industrial service |
Motorola |
| 2787 |
2N3211 |
NPN silicon high frequency switching transistor for industrial service |
Motorola |
| 2788 |
2N3227 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
| 2789 |
2N3251 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2790 |
2N3252 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
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