| No. |
Part Name |
Description |
Manufacturer |
| 2701 |
2N2912 |
PNP high-speed, high-frequency power transistor |
Motorola |
| 2702 |
2N2912 |
PNP high-speed, high-frequency power transistor |
Motorola |
| 2703 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2704 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2705 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2706 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2707 |
2N2916DCSM |
DUAL NPN PLANAR TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2708 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2709 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2710 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2711 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2712 |
2N2920DCSM |
DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2713 |
2N2942 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 2714 |
2N2943 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 2715 |
2N2944 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 2716 |
2N2945 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 2717 |
2N2946 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 2718 |
2N2955 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2719 |
2N2956 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2720 |
2N2957 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2721 |
2N2958 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 2722 |
2N2959 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 2723 |
2N2962 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 2724 |
2N2963 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 2725 |
2N2964 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 2726 |
2N2965 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 2727 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2728 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2729 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2730 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
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