| No. |
Part Name |
Description |
Manufacturer |
| 2821 |
2N3439 |
Silicon NPN High Voltage Transistor |
IPRS Baneasa |
| 2822 |
2N3439 |
HIGH VOLTAGE NPN TRANSISTORS |
SemeLAB |
| 2823 |
2N3439CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2824 |
2N3439CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2825 |
2N3439CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2826 |
2N3439CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2827 |
2N3440 |
HIGH VOLTAGE AMPLIFIERS |
Boca Semiconductor Corporation |
| 2828 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 2829 |
2N3440 |
High-voltage silicon N-P-N planar transistor. |
General Electric Solid State |
| 2830 |
2N3440 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 2831 |
2N3440 |
Silicon NPN High Voltage Transistor |
IPRS Baneasa |
| 2832 |
2N3440 |
HIGH VOLTAGE NPN TRANSISTORS |
SemeLAB |
| 2833 |
2N3440CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2834 |
2N3440CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2835 |
2N3440S |
Silicon planar epitaxial NPN transistor intended for high voltage switching and linear amplifier applications |
SGS-ATES |
| 2836 |
2N3442 |
HIGH-POWER INDUSTRIAL TRANSISTORS |
Boca Semiconductor Corporation |
| 2837 |
2N3442 |
High power industrial transistor |
Comset Semiconductors |
| 2838 |
2N3442 |
High voltage silicon N-P-N transistor. 160V, 117W. |
General Electric Solid State |
| 2839 |
2N3442 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 2840 |
2N3442 |
Silicon n-p-n high power transistor |
Mullard |
| 2841 |
2N3442 |
High voltage hometaxial NPN transistor in Jedec TO-3 metal case |
SGS-ATES |
| 2842 |
2N3442 |
Silicon HOMETAXIAL NPN transistor, high power, high voltage switch |
SGS-ATES |
| 2843 |
2N3442 |
Silicon HOMETAXIAL NPN transistor, high power, high voltage switch |
SGS-ATES |
| 2844 |
2N3442-D |
High-Power Industrial Transistors |
ON Semiconductor |
| 2845 |
2N3444 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
| 2846 |
2N3444 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 2847 |
2N3485 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 2848 |
2N3485A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 2849 |
2N3486 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 2850 |
2N3486A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
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