| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2SC2484 |
Silicon NPN epitaxial base mesa transistor, 80V, 5A |
Panasonic |
| 272 |
2SC2488 |
SI NPN EPITAXIAL MESA |
Panasonic |
| 273 |
2SC2489 |
SI NPN EPITAXIAL MESA |
Panasonic |
| 274 |
2SC2498 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
| 275 |
2SC2500 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 276 |
2SC2508 |
Silicon NPN epitaxial planar VHF band power transistor 27W |
TOSHIBA |
| 277 |
2SC2509 |
Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications |
TOSHIBA |
| 278 |
2SC2510 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) |
TOSHIBA |
| 279 |
2SC2519 |
SILICON NPN EPITAXIAL PLANAR |
Panasonic |
| 280 |
2SC2531 |
Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications 28V supply voltage use |
TOSHIBA |
| 281 |
2SC2532 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications |
TOSHIBA |
| 282 |
2SC2538 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 283 |
2SC2539 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 284 |
2SC2540 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 285 |
2SC2551 |
Transistor Silicon NPN Epitaxial Type (PCT process) Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 286 |
2SC2561 |
Si NPN epitaxial planar. RF amplifier. |
Panasonic |
| 287 |
2SC2562 |
Silicon NPN epitaxial high-current switching transistor |
TOSHIBA |
| 288 |
2SC2563 |
Silicon NPN epitaxial audio frequency power transistor |
TOSHIBA |
| 289 |
2SC2564 |
Silicon NPN epitaxial power transistor, complementary to 2SA1094 |
TOSHIBA |
| 290 |
2SC2565 |
Silicon NPN epitaxial power transistor, complementary to 2SA1095 |
TOSHIBA |
| 291 |
2SC2591 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 292 |
2SC2592 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 293 |
2SC2609 |
NPN epitaxial planar RF power VHF transistor 100W 28V |
Mitsubishi Electric Corporation |
| 294 |
2SC2620 |
Silicon NPN Epitaxial Planar |
Hitachi Semiconductor |
| 295 |
2SC2633 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 296 |
2SC2644 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Wideband Amplifier Applications (fT=4GHz) |
TOSHIBA |
| 297 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
| 298 |
2SC2655 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 299 |
2SC2668 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, IF Amplifier Applications |
TOSHIBA |
| 300 |
2SC2669 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications |
TOSHIBA |
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