| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2SC2620 |
Silicon NPN Epitaxial Planar |
Hitachi Semiconductor |
| 332 |
2SC2633 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 333 |
2SC2644 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Wideband Amplifier Applications (fT=4GHz) |
TOSHIBA |
| 334 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
| 335 |
2SC2655 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 336 |
2SC2668 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, IF Amplifier Applications |
TOSHIBA |
| 337 |
2SC2669 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications |
TOSHIBA |
| 338 |
2SC2670 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 339 |
2SC2671 |
Silicon NPN epitaxial planer type(For UHF band low-noise amplification) |
Panasonic |
| 340 |
2SC2671(H) |
Si NPN epitaxial planar. UHF low-noise amplifier. |
Panasonic |
| 341 |
2SC2671H |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 342 |
2SC2694 |
NPN Epitaxial Planar Type |
Mitsubishi Electric Corporation |
| 343 |
2SC2703 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 344 |
2SC2704 |
Silicon NPN epitaxial audio frequency transistor, complementary to 2SA1144 |
TOSHIBA |
| 345 |
2SC2705 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS |
TOSHIBA |
| 346 |
2SC2706 |
Silicon NPN epitaxial audio frequency power transistor, complementary to 2SA1146 |
TOSHIBA |
| 347 |
2SC2710 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier Applications |
TOSHIBA |
| 348 |
2SC2712 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 349 |
2SC2713 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 350 |
2SC2714 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX,IF Amplifier Applications |
TOSHIBA |
| 351 |
2SC2715 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications |
TOSHIBA |
| 352 |
2SC2716 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 353 |
2SC2717 |
Transistor Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier Applications |
TOSHIBA |
| 354 |
2SC2753 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
| 355 |
2SC2754 |
Silicon NPN epitaxial type transistor (PCT Process) |
TOSHIBA |
| 356 |
2SC2776 |
Silicon NPN Epitaxial Planar |
Hitachi Semiconductor |
| 357 |
2SC2782 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 358 |
2SC2797 |
NPN epitaxial planar RF power UHF transistor 5W 24V |
Mitsubishi Electric Corporation |
| 359 |
2SC2798 |
NPN epitaxial planar RF power UHF transistor 12W 24V |
Mitsubishi Electric Corporation |
| 360 |
2SC2799 |
NPN epitaxial planar RF power UHF transistor 25W 24V |
Mitsubishi Electric Corporation |
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