| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2SC2670 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 302 |
2SC2671 |
Silicon NPN epitaxial planer type(For UHF band low-noise amplification) |
Panasonic |
| 303 |
2SC2671(H) |
Si NPN epitaxial planar. UHF low-noise amplifier. |
Panasonic |
| 304 |
2SC2671H |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 305 |
2SC2694 |
NPN Epitaxial Planar Type |
Mitsubishi Electric Corporation |
| 306 |
2SC2703 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 307 |
2SC2704 |
Silicon NPN epitaxial audio frequency transistor, complementary to 2SA1144 |
TOSHIBA |
| 308 |
2SC2705 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS |
TOSHIBA |
| 309 |
2SC2706 |
Silicon NPN epitaxial audio frequency power transistor, complementary to 2SA1146 |
TOSHIBA |
| 310 |
2SC2710 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier Applications |
TOSHIBA |
| 311 |
2SC2712 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 312 |
2SC2713 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 313 |
2SC2714 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX,IF Amplifier Applications |
TOSHIBA |
| 314 |
2SC2715 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications |
TOSHIBA |
| 315 |
2SC2716 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 316 |
2SC2717 |
Transistor Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier Applications |
TOSHIBA |
| 317 |
2SC2753 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
| 318 |
2SC2776 |
Silicon NPN Epitaxial Planar |
Hitachi Semiconductor |
| 319 |
2SC2782 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 320 |
2SC2797 |
NPN epitaxial planar RF power UHF transistor 5W 24V |
Mitsubishi Electric Corporation |
| 321 |
2SC2798 |
NPN epitaxial planar RF power UHF transistor 12W 24V |
Mitsubishi Electric Corporation |
| 322 |
2SC2799 |
NPN epitaxial planar RF power UHF transistor 25W 24V |
Mitsubishi Electric Corporation |
| 323 |
2SC280H |
Silicon NPN Epitaxial LTP Twin Transistor, intended for use in DC Amplifier |
Hitachi Semiconductor |
| 324 |
2SC281 |
Silicon NPN Epitaxial LTP Transistor Vcbo=30V, Pc=200mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 325 |
2SC2814 |
NPN Epitaxial Planar Silicon Transistor High-Friquency General-Purpose Amplifier Applications |
SANYO |
| 326 |
2SC281H |
Silicon NPN Epitaxial LTP Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 327 |
2SC2824 |
SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
TOSHIBA |
| 328 |
2SC282H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
| 329 |
2SC283 |
Silicon NPN Epitaxial LTP Transistor Vcbo=50V, Pc=350mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 330 |
2SC2839 |
NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications |
SANYO |
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